Quenching and room-temperature annealing effects on the conductivity of underdoped HoBa2Cu3O7−δ

Author:

Khadzhai G. Ya.1,Vovk R. V.1,Vovk N. R.1,Boiko Yu. I.1,Kamchatnaya S. N.1,Pinto Simoes V. M.2,Dobrovolskiy O. V.13ORCID

Affiliation:

1. Physics Department, V. Karazin Kharkiv National University, 61077 Kharkiv, Ukraine

2. ISEC Lisboa — Instituto Superior de Educacao a Ciencias, 1750-142 Lisboa, Portugal

3. Physikalisches Institut, Goethe University, 60438 Frankfurt am Main, Germany

Abstract

The effects of quenching from 600[Formula: see text]C and subsequent room-temperature annealing on the basal-plane electrical resistivity of underdoped HoBa2Cu3O[Formula: see text] single crystals are investigated. Regions with different superconducting transition temperatures, [Formula: see text], have been revealed in the sample after quenching and attributed to a non-uniform distribution of the labile oxygen in the sample volume. Room-temperature annealing has been revealed to lead to an increase of [Formula: see text] of all regions and a decrease of their number, attributed to the coalescence of clusters of oxygen vacancies. The temperature dependence of the resistance in the normal state is characterized by a decrease of the residual resistivity and the phonon scattering coefficient.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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