SPIN-DEPENDENT SHOT NOISE IN APERIODIC SEMICONDUCTOR MULTILAYERS HETEROSTRUCTURES-Reference-Cited by-同舟云学术

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SPIN-DEPENDENT SHOT NOISE IN APERIODIC SEMICONDUCTOR MULTILAYERS HETEROSTRUCTURES

Published:2012-10-22 Issue:30 Volume:26 Page:1250200
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

QIN AILI¹²,LIU DE²

Affiliation:

1. School of Science, Hebei Normal University of Engineering, Handan 056038, China

2. College of Physics and Information Engineering, Hebei Normal University, Shijiazhuang 050016, China

Abstract

We investigated the spin-dependent shot noise in aperiodic semiconductor multilayers heterostructures in the presence of the Rashba spin-orbit interaction and an electric field. The results indicate that the shot noise and Fano factor are strongly spin-dependent and can be greatly modulated not only by the external bias voltage and Rashba spin-orbit interaction but also by the thicknesses of block A and B. Our investigations may provide away to design the detection system electronic devices.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984912502004

Reference17 articles.

1. Switching effect in spin field-effect transistors

2. Ballistic transport properties in spin field-effect transistors

3. Spin-dependent resonant tunneling in a periodic non-magnetic heterostructure with spin–orbit effects

4. A nonmagnetic spintronic adder

5. Coherent spin-valve phenomena and electrical spin injection in ferromagnetic/semiconductor/ferromagnetic junctions

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