Formulae for low-energy secondary electron yield from different kinds of emitters as a function of measurable variables

Abstract

Based on the characteristics of secondary electron emission and the relationships among parameters of secondary electron yield [Formula: see text] in the low-energy range of [Formula: see text] eV (low-energy [Formula: see text]), the universal formula for low-energy [Formula: see text] as a function of [Formula: see text], [Formula: see text] and maximum [Formula: see text] was deduced, where [Formula: see text] and [Formula: see text] are the incident energies of primary electron and of [Formula: see text], respectively. From the deduced universal formula and experimental low-energy [Formula: see text] from metals, semiconductors and insulators, special formula for low-energy [Formula: see text] from metals as a function of [Formula: see text], [Formula: see text] and [Formula: see text] and that for low-energy [Formula: see text] from semiconductors and insulators as a function of [Formula: see text], [Formula: see text] and [Formula: see text] were deduced, respectively. The results were analyzed, it can be concluded that the two deduced special formulae can be used to calculate low-energy [Formula: see text] from metals, semiconductors and insulators, respectively.