A low noise CMOS instrumentation amplifier for TMR-effect-based magnetic sensors

Author:

Zhang Wenbo12,Chen Weiping12,Yin Liang12ORCID,Fu Qiang12,Di Xinpeng34,Zhang Yufeng12,Liu Xiaowei12

Affiliation:

1. MEMS Center, Harbin Institute of Technology, Harbin, Heilongjiang, China

2. Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, Heilongjiang, China

3. Shanghai Key Laboratory of Aerospace Intelligent Control Technology, Shanghai, China

4. Shanghai Aerospace Control Technology Institute, Shanghai, China

Abstract

This paper presents a low [Formula: see text] noise CMOS single-ended output instrumentation amplifier (IA) for tunneling magnetic resistance (TMR) sensors. For high DC gain and linearity, the amplifier employs three-stage current-feedback topology. For high CMRR and PSRR, the first two stages employ fully differential input. To maintain stability and lower the power dissipation, the amplifier employs trans-conductance with capacitance feedback compensation (TCFC) topology. The amplifier employs chopping technology and continuous-time AC-coupled ripple reduction loop to reduce [Formula: see text] noise and chopping ripple. The whole chip is fabricated using 0.35 [Formula: see text]m CMOS-BCD technology and the total area is 1 mm2. Test result shows an input-referred noise power spectral density (PSD) of 14 nV/[Formula: see text] is achieved with 1 Hz [Formula: see text] corner. The bandwidth is larger than 50 kHz [Formula: see text] with 20 pF load capacitor. The total current is 300 [Formula: see text]A at 5 V supply.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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