GROUND STATE ENERGY LEVELS OF INDIUM ARSENIDE QUANTUM DOTS CALCULATED BY A SINGLE BAND EFFECTIVE MASS MODEL USING REPRESENTATIVE STRAINED INPUT PROPERTIES

Abstract

Representative strained values of effective mass and potential of charge carriers in indium arsenide ( InAs ) quantum dots have been used as input to the complete orthonormal set approach of an effective-mass, single-band, and constant-potential model for the calculation of the ground state energy levels. Even with the avoidance of the diagonalization of the strain Hamiltonian matrix, the single-band-model-calculated ground state energy levels are reasonably refined by the use of representative strained values of potential and effective mass.