Carrier heating in quantum dot structures

Abstract

In this paper, the effect of carrier heating (CH) in the four-wave mixing theory in quantum dot (QD) structure has been studied. The influence of parameters such as CH nonlinear gain parameter, wetting layer carrier density, CH time constant, QD ground and excited state energies have been examined. Our model predicts a low CH for QDs which can explain earlier experimental measurements in this field. To the best of our knowledge, this study has not been discussed before.