ACCEPTOR-RELATED RADIATIVE RECOMBINATION OF QUASI-TWO-DIMENSIONAL ELECTRONS IN MODULATION-DOPED GaAs/AlxGa1−xAs HETEROJUNCTIONS
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Published:1996-04-10
Issue:08
Volume:10
Page:323-328
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ISSN:0217-9849
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Container-title:Modern Physics Letters B
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language:en
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Short-container-title:Mod. Phys. Lett. B
Author:
CHUA S.J.1,
XU S.J.1,
TANG X.H.1
Affiliation:
1. Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore
Abstract
The radiative recombination of quasi-two-dimensional electrons with photoexcited holes bound to acceptors is investigated in modulation-doped GaAs / Al x Ga 1–x As heterojunctions. With increase in temperature, a blue shift of about 2.5 meV is observed for a temperature change from 4 K to 40 K. Also, observed is a rapid decrease in intensity of its low energy peaks. This change in line shape of the acceptor-related emission in the GaAs / Al x Ga 1–x As heterojunctions is accounted for by the effect of band bending and the spatial distribution of acceptors.
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics