Measurement of junction temperature and thermal resistance in InGaAlAs/AlGaAs quantum-well superluminescent diodes (SLDs)

Abstract

This paper reports on the experimental method of the determination of junction temperature and thermal resistance in 840 nm InGaAlAs/AlGaAs compressive strained single quantum well (SQW) superluminescent diodes (SLDs). The linear relation between forward voltage and junction temperature clearly occurs by utilizing the forward voltage–temperature ([Formula: see text]–[Formula: see text]) method. The temperature coefficient [Formula: see text] has been determined. Under 100 mA continuous-wave (CW) operation condition, the thermal resistance is measured to be 81.6[Formula: see text]C/W, which is not significantly different with the theoretical calculation result.