Affiliation:
1. Hunan University of Science and Engineering, Yongzhou 425100, China
Abstract
We theoretically explore the effect of a [Formula: see text]-potential on spin-polarized dwell time for electron in a magnetic nanostructure, which can be achieved by depositing a vertically-magnetized ferromagnetic stripe on top of InAs/AlxIn[Formula: see text]As. The dwell time is found to be still spin-polarized because the [Formula: see text]-potential does not eliminate the spin-field interaction in the magnetic nanostructure. Spin-polarized dwell time is also found to be controllable by changing weight or position of the [Formula: see text]-potential since the effective potential experienced by electron in the magnetic nanostructure depends on the [Formula: see text]-potential. Therefore, such a [Formula: see text]-doped, magnetic nanostructure can act as a structurally-manipulable temporal spin splitter for spintronic device applications.
Funder
Research Foundation of the Education Bureau of Hunan Province, China
Publisher
World Scientific Pub Co Pte Ltd
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics