A STUDY ON MAGNETIC PROPERTIES OF Cu-DOPED GaN

Author:

SHI LI-BIN1,YUAN HONG-KUAN2

Affiliation:

1. Department of Physics, Bohai University, Liaoning Jinzhou 121013, China

2. School of Physical Science and Technology, Southwest University, Chongqing 400715, China

Abstract

Using the first principle method based on density functional theory (DFT), we have studied the magnetic properties in Cu -doped GaN . The result shows that Cu in GaN exhibits spontaneous spin polarization. The energies of ferromagnetism (FM) and antiferromagnetism (AFM) coupling are calculated for eleven different configurations. It is found that Cu -doped GaN has a FM ground state. It is not found that Cu atoms have a clear clustering tendency. Origin of FM properties is also explained by energy level coupling model. In the paper, we also investigate the effect of nitrogen, gallium vacancies and carbon impurities on magnetic properties. The results show that nitrogen, gallium vacancies and carbon impurities cannot enhance FM coupling of Cu -doped GaN . In addition, exchange coupling coefficient and Curie temperature are also investigated. The Cu -doped GaN is proposed to be weak ferromagnetism according to Curie temperature and magnetic moment. The present study provides some theoretical understanding for the experiments on Cu -doped GaN .

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. First-principles study on electronic structure and optical properties of In-doped GaN;Journal of Theoretical and Computational Chemistry;2014-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3