CHANNELING ENERGY LOSS IN SILICON BY USING NUMERICAL AND EXPERIMENTAL METHODS

Abstract

A Monte Carlo simulation program was developed to calculate the variations of the channeled to random electronic stopping powers of He + in an energy 4 MeV in silicon single crystal along the major 〈100〉, 〈110〉 and 〈111〉 axes. This paper discusses both simulation and experimental results that shed light on the contribution of these factors. Results obtained by our simulation are in good agreement with the experimental results.