Photoluminescence of Ca4Ga2S7:Eu2+ in wide excitation intensity and temperature range

Author:

Urmanov B. D.1,Leanenia M. S.1,Yablonskii G. P.1,Taghiyev O. B.23,Taghiyev K. O.4,Kazimova F. A.2ORCID,Ibragimova T. Sh.2

Affiliation:

1. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk, Belarus

2. Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan

3. Branch of Moscow State University Named After M. V. Lomonosov in Baku, Baku, Azerbaijan

4. BP P.L.C. — Integrated Energy Company, Baku, Azerbaijan

Abstract

Photoluminescence properties of [Formula: see text] chalcogenide semiconductors have been studied under the impulse laser excitation in the range of 10–105 W/cm2 at room temperature. This study has shown that as a result of excitation, photoluminescence of [Formula: see text] is characterized by the emission in the interval of 450–575 nm with significant domination in the spectra line at 660 nm. Photoluminescence of [Formula: see text] quenches at wavelengths of 560 nm and 660 nm with constant time frames 258 ns and 326 ns, respectively. Moreover, the temperature measurements of photoluminescence were performed on the samples in the temperature range of 10–300 K.

Funder

Science Development Foundation under the President of the Republic of Azerbaijan

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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