ELECTROPHONON RESONANCE IN DOPED SEMICONDUCTOR SUPERLATTICES

Author:

PHONG TRAN CONG1,LAM VO THANH2,HOI BUI DINH3

Affiliation:

1. National Education Union of Vietnam, 2 Trinh Hoai Duc, Dong Da, Ha Noi, Vietnam

2. Department of Natural Sciences, Sai Gon University, 273 An Duong Vuong, District 5, Ho Chi Minh, Vietnam

3. National University of Civil Engineering, 55 Giai Phong, Hai Ba Trung, Ha Noi, Vietnam

Abstract

The electrophonon resonance (EPR) effect in doped semiconductor superlattices (DSSL) are investigated by using the quantum kinetic equation (QKE) for electrons to obtain the general analytic expression for optical absorption coefficient. We also obtain an EPR condition as a function of the photon energy and plasma energy. In particular, anomalous behaviors of the EPR effect such as the splitting of EPR peaks for incident photon energy or plasma energy are discussed. This raises a possibility of detecting electric subbands in DSSLs experimentally by utilizing EPR effects.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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