Affiliation:
1. College of Physics and Information Technology, Shaanxi Normal University, Xian 710119, Shaanxi, China
2. State Key Laboratory for Mechanical Behavior of Materials, Xian Jiaotong University, Xian 710049, Shaanxi, China
Abstract
The geometrical, electronic and magnetic properties of the Zn[Formula: see text]Mo[Formula: see text]M (M[Formula: see text]=[Formula: see text]S, Se and Te) have been studied by spin-polarized first-principles calculation. The optimized lattice constants of 5.535, 5.836 and 6.274 Å for M[Formula: see text]=[Formula: see text]S, Se and Te are related to the atomic radius of 1.09, 1.22 and 1.42 Å for S, Se and Te atoms, respectively. The Zn[Formula: see text]Mo[Formula: see text]M are magnetic half-metallic (HM) with the spin-down conventional band gaps of 2.899, 2.126 and 1.840 eV, while the HM band gaps of 0.393, 0.016 and 0.294 eV for M[Formula: see text]=[Formula: see text]S, Se and Te, respectively. At the Fermi level, the less than half-filled Mo-[Formula: see text] orbital hybridizated with the less M-[Formula: see text] orbital contributes only spin-up channel leading Zn[Formula: see text]Mo[Formula: see text]M an HM ferromagnetism. The tetrahedral crystal field formed by adjacent three Zn atoms and one M atom splits the spin-up channel (majority spin) of Mo-[Formula: see text] orbital into three-fold degenerate [Formula: see text] states at the Fermi level and double degenerate [Formula: see text] [Formula: see text] states below the Fermi level. The exchange splitting energies of the Zn[Formula: see text]Mo[Formula: see text]M are −2.611, −2.231 and −1.717 eV for M[Formula: see text]=[Formula: see text]S, Se and Te, respectively. The results provide an useful theoretical guidance for Zn[Formula: see text]Mo[Formula: see text]M applications in spintronic devices.
Funder
the National Natural Science Foundation of China
Innovation Funds of Graduate Programs of SNNU
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Cited by
5 articles.
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