Studies of Silicon Nanowires with Different Parameters — By PECVD

Abstract

One-dimensional nanostructures such as nanowires have a wide range of applications. Silicon is the best competitive material for the carbon nanotubes (CNTs). Carbon and silicon have some similar and peculiar properties. Silicon nanowires (SiNWs) were synthesized using plasma enhanced chemical vapor deposition (PECVD) on p-Si (111) wafer. Gold is used as a catalyst for the growth of the SiNWs. Based on our fundamental understanding of vapor–liquid–solid (VLS) nanowire growth mechanism, different levels of growth controls have been achieved. Gold catalyst deposited and annealed at different temperatures with different thicknesses (450[Formula: see text]C, 500[Formula: see text]C and 550[Formula: see text]C, 600[Formula: see text]C, 650[Formula: see text]C for 4[Formula: see text]min and 8[Formula: see text]min and 3[Formula: see text]nm, 5[Formula: see text]nm, 30[Formula: see text]nm Au thickness). SiNW grown by PECVD with different carrier gases varies with flow rate. We observed the different dimensions of Si nanowires by FESEM and optimized the growth parameters to get the vertical aligned and singular Si nanowires. Optical phonon of the Si nanowires and crystallinity nature were identified by Raman spectral studies.