Nanostructuring of the CIGS Films Surface by the Plasma Treatment with Low Ion Energy-Reference-Cited by-同舟云学术

Nanostructuring of the CIGS Films Surface by the Plasma Treatment with Low Ion Energy

Published:2019-06 Issue:03n04 Volume:18 Page:1940064
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

Zimin S. P.¹,Mazaletskiy L. A.¹,Amirov I. I.²,Gorlachev E. S.²,Gremenok V. F.³,Khoroshko V. V.⁴

Affiliation:

1. Microelectronics and General Physics Department, Yaroslavl State University, Sovetskaya 14, 150003 Yaroslavl, Russia

2. Yaroslavl Branch of the Institute of Physics and Technology RAS, Universitetskaya 21, 150007 Yaroslavl, Russia

3. Scientific-Practical Materials Research Center NASB, P. Browka 19, 220072 Minsk, Belarus

4. Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus

Abstract

We report on surface nanostructuring of Cu(In,Ga)Se2 (CIGS) films using inductively coupled argon plasma treatment with the ion energy of 25–30[Formula: see text]eV within 30–120[Formula: see text]s. The films were fabricated on glass substrates using the selenization method and had a polycrystalline structure. We demonstrate that the plasma treatment results in the formation of tip-shaped nanostructure arrays with the geometrical parameters controlled by the treatment duration. The features of the surface nanostructuring using low energy ions are discussed.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X19400647

Reference3 articles.

1. Surface nanostructuring of CuIn1−xGaxSe2films using argon plasma treatment

2. Growth and Optical Properties of Cu(In, Ga)Se2 Thin Films on Flexible Metallic Foils