ELECTRICAL PROPERTIES OF REACTIVELY-SPUTTERED HYDROGENATED CARBON NITRIDE FILMS

Abstract

Hydrogenated carbon nitride films have been synthesized on Si (100) by DC reactive sputtering with RF bias. These films are characterized by transmission electron microscopy and atomic force microscopy. Hydrogenated carbon nitride films have low surface roughness. At low hydrogen fraction, the films include small crystallites. High hydrogen fraction promotes the films to be amorphous. The resistivities of the films are measured, which range from 6.35×105 to 1.16×108 Ω· cm . The measured resistivity results indicate that the hydrogenated carbon nitride films have semiconductive properties. The resistivity largely depends on the bonding configurations. Effects of H2 fraction, target current and substrate bias are investigated. All these deposition parameters have influence on the resistivities. High C—H, N—H and C—NH bond fractions result in high resistivity.