OXYGEN PARTIAL PRESSURE AND SUBSTRATE BIAS VOLTAGE INFLUENCED STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF RF MAGNETRON SPUTTERED Ag2Cu2O3 FILMS

Author:

UTHANNA S.1,REDDY M. HARI PRASAD1,PIERSON J. F.2

Affiliation:

1. Department of Physics, Sri Venkateswara University, Tirupati 517 502, India

2. Institut Jean Lamour (UMR CNRS 7198), Department CP2S, Ecole des Mines, Parc de Saurupt, CS 14234, 54042, Nancy cedex, France

Abstract

Ag2Cu2O3 films were deposited on glass substrates held at 303 K by RF magnetron sputtering of Ag70 Cu30 target at different oxygen partial pressures and substrate bias voltages. Single phase Ag2Cu2O3 films were formed at an oxygen partial pressure of 2 × 10-2 Pa . The films deposited at oxygen partial pressure 2 × 10-2 Pa and substrate bias voltage of -60 V were nanocrystalline with crystallite size of 20 nm, low electrical resistivity of 3.9 Ωcm and optical band gap of 2.02 eV.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

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