GROUND AND EXCITED STATE PHOTOLUMINESCENCE MAPPING ON InAs/InGaAs QUANTUM DOT STRUCTURES

Abstract

This paper presents the photoluminescence study at 12 K and scanning photoluminescence spectroscopy investigation of the ground and excited states at 80 and 300 K on InAs QDs inserted in In 0.15 Ga 0.85 As / GaAs QW structures and created at different QD growth temperatures. It is shown that investigated structures are characterized by the long range variation of an average QD size in QD ensemble across the wafer. This long range QD size inhomogeneity was used for investigation of the multi-excited state energy trend versus ground state energy (or QD sizes).