INDIRECT MEASUREMENT OF Zn-DOPED In2S3 NANOFILMS' SPECIFIC HEAT CAPACITY

Abstract

ZnIn 2 S 4 nanofilms were grown on In 2 S 3 substrates. The band gap of ZnIn 2 S 4 barriers was approximately 2.8 eV at room temperature. The morphology and structure of the obtained nanofilms were already investigated via transmission electron microscope (TEM), scanning electron microscope (SEM) and X-ray diffraction analyses.1,2 In this paper, thermal analyses are performed via a photothermal technique, which has been used to indirectly evaluate the specific heat capacity of the obtained Zn -doped nanofilms. The yielded value for an optimal zinc-to-indium ratio, x (0.33), at the mean room temperature (T∞ = 301 K ), was Cs ≈ 411.5 J K -1 kg -1.