INFLUENCE OF ROOM HUMIDITY ON THE FORMATION OF NANOSCALE SILICON OXIDE PATTERNED BY AFM LITHOGRAPHY

Author:

ABDULLAH A. MAKARIMI12,HUTAGALUNG SABAR D.1,LOCKMAN ZAINOVIA1

Affiliation:

1. School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia

2. Advance Material Research Center SIRIM Berhad, Lot 34, Jalan Hi-Tech 2/3, Kulim Hi-Tech Park, 09000, Kedah, Malaysia

Abstract

Nanometer-scale silicon oxide mask was patterned by atomic force microscope (AFM) lithography for fabrication of nanoelectronic devices. The oxide growth mechanism is similar to a well-known local anodic oxidation, which a negative voltage applied to conductive AFM tip in order to grow oxide patterns on silicon layer surface. The surrounding environment is one of the very important parameter on the formation of nanoscale silicon oxide patterns via AFM lithography. Therefore, in this work, the effect of relative humidity (RH) has been studied systematically in the range of 55–72%. Meanwhile, the applied tip voltage, exposure time, and scanning speed were kept constant during lithography process. From AFM topographic analysis on the fabricated nanopatterns found that the oxide width and thickness are significantly depending on the room humidity. These results proved that the room humidity is playing an important role on the fabrication of nanometer-scale oxide patterns by using AFM nanolithography.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

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