Radiative Recombination in the Cu(In,Ga)Se2 Thin Films Irradiated with Hydrogen Ions-Reference-Cited by-同舟云学术

Radiative Recombination in the Cu(In,Ga)Se2 Thin Films Irradiated with Hydrogen Ions

Published:2019-03-28 Issue:03n04 Volume:18 Page:1940033
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

Borodavchenko O.¹,Zhivulko V.¹,Yakushev M.²,Sulimov M.²

Affiliation:

1. Scientific-Practical Material Research Centre NASB, P. Browka 19, 220072 Minsk, Belarus

2. M. N. Miheev Institute of Metal Physics of the Ural Branch RAS, S. Kovalevskaya 18, 620002 Ekaterinburg, Russia

Abstract

The irradiation-induced effects in Cu(In,Ca)Se2 thin films after irradiation with hydrogen ions with dose of [Formula: see text][Formula: see text]cm[Formula: see text] and different energies in the range of 2.5–10[Formula: see text]keV were studied. Irradiated and nonirradiated thin films were investigated by low-temperature (4.2[Formula: see text]K) photoluminescence and photoluminescence excitation methods. The appearance of intense bands at [Formula: see text][Formula: see text]eV and 0.77[Formula: see text]eV in the photoluminescence spectra may be related to radiative recombination on the irradiation-induced defects with deep energy levels in the bandgap of Cu(In,Ca)Se2 solid solutions. A possible nature of these defects and process of radiative recombination are discussed.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X19400337

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