SCANNING E-BEAM LONGITUDINALLY PUMPED RT OPERABLE LASER BASED ON MOVPE-GROWN GaInP/AlGaInP MQW STRUCTURE

Abstract

The 17- and 25-period Ga 0.5 In 0.5 P /( Al 0.7 Ga 0.3)0.5 In 0.5 P quantum well structures were grown by metalorganic vapor phase epitaxy on a GaAs substrate misoriented by 10° from (001) to (111)A. A microcavity with dielectric oxide mirrors was fabricated on the basis of each structure. Lasing at 619 nm (632 nm) with 0.7 W (6 W) output power was achieved under scanning electron beam longitudinal pumping at room temperature using the 17-period (25-period) structure. The threshold current density at a 40 keV electron energy was 8 A/cm 2. It is shown that low threshold and high power lasing requires the position of the QWs to coincide with the antinodes of the cavity mode, at the maximum of the gain spectrum due to the QW ground state.