Affiliation:
1. Department of Physics, University of South Africa, P. O. Box 392, UNISA 0003, South Africa
Abstract
Exact analytical expressions for the eigenvalues and eigenvectors of the six-band k · p matrix Hamiltonian for narrow-gap III–V semiconductors are used to derive an analytical expression for the transmission coefficient T in type-II heterojunctions. The remote band coupling is included via the two Luttinger-type parameters, γ1 and [Formula: see text]. The expression for T contains two separate contributions: one from electron to light-hole tunneling and the other from electron to heavy-hole tunneling. Using the expression for T, the net recombination current density J is defined and evaluated for the specific case of an InAs/GaSb heterojunction. Ohmic behavior is observed in J for small applied voltages V approximately in the range -0.15 to 0.075 eV. Outside of this range, J changes nonlinearly with respect to changes in V. Comparison of the heavy-hole and light-hole contributions to J shows that the heavy-hole contribution increases J by approximately 10% at room temperature. The results for the InAs/GaSb heterojunction are in qualitative agreement with recent experimental observations.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology
Cited by
2 articles.
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