Affiliation:
1. Institute of Physics and Applied Mathematics, Ural State University, Ekaterinburg 620083, Russia
Abstract
The Rashba effect peculiarities in gated accumulation layers on the zero-gap HgCdTe are studied theoretically and experimentally. It is shown that the kinetic binding is strongly affected by spin–orbit interaction. Although the spin–orbit splitting is smaller in accumulation layers as compared with inversion ones, the "Rashba polarization", Δn/n, can achieve 100% in the kinetic confinement regime.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology