GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS: OPTICAL PROPERTIES ENGINEERING AND APPLICATION-Reference-Cited by-同舟云学术

GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS: OPTICAL PROPERTIES ENGINEERING AND APPLICATION

Published:2007-10 Issue:05 Volume:06 Page:315-318
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

KOVALYOV A. A.¹,PCHELYAKOV O. P.¹,PREOBRAZHENSKII V. V.¹,PUTYATO M. M.¹,RUBTSOVA N. N.¹,SOROKIN E.²,SOROKINA I. T.²

Affiliation:

1. Institute of Semiconductor Physics, Siberian Division of Russian Academy of Sciences, 13, Academician Lavrentyev Prospect, Novosibirsk, Russia

2. Technical University, Gusshausstrasse 27/387, A-1040, Vienna, Austria

Abstract

MBE growth of GaSb / InGaAsSb / GaSb heterostructures of high crystal quality is performed under continual RHEED control. Transmission spectra of the films forming multiple quantum wells in λ ≈ 2–3 μm region confirm possibility to control optical properties of the structures through quantum confinement and through the content of semiconductor elements. New design of saturable absorption semiconductor mirror (SESAM) for Cr 2+: ZnSe laser is proposed and manufactured on the base of the single quantum well GaSb / InGaAsSb / GaSb placed between dielectric antireflection and broadband high reflection coatings.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X07004857

Reference4 articles.

1. Cr2+-doped II–VI materials for lasers and nonlinear optics

2. I. T. Sorokina, OSA Trends in Optics and Photonics, Advanced Solid-State Lasers 46 (Optical Society of America, Washington, DC, 2001) pp. 157–161.

3. Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers

4. Femtosecond KCl:Li and RbCl:Li color-center lasers near 28 μm with a HgCdTe multiple-quantum-well saturable absorber

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