Affiliation:
1. Centre for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad 44000, Pakistan
Abstract
The Schottky contacts of Ag/SiO2 /p- Si were fabricated by thermal evaporation at 20 K. The effect of annealing temperatures varying from 373 to 773 K on the morphology and electrical properties of these contacts was investigated. The average grain size increased while the density of grains decreased with increasing temperature. Ideality factor initially observed was as high as 4.15 with a low barrier height of 0.04 eV for contact grown at 20 K. Annealing resulted in shift of ideality factor and barrier height towards ideal behavior. Thus, it is demonstrated that Ag/SiO2 /p- Si contacts grown at low temperature can be modified by annealing.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology