PROGRESS ON ANISOTROPIC MAGNETORESISTANCE EFFECT IN PEROVSKITE MANGANITES-Reference-Cited by-同舟云学术

PROGRESS ON ANISOTROPIC MAGNETORESISTANCE EFFECT IN PEROVSKITE MANGANITES

Published:2012-12 Issue:04 Volume:02 Page:1230004
ISSN:2010-3247
Container-title:SPIN
language:en
Short-container-title:SPIN

Author:

YANG HUALI¹²,LIU YIWEI¹²,LI RUN-WEI¹²

Affiliation:

1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo 315201, People's Republic of China

2. Zhejiang Province Key Laboratory of Magnetic, Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo, 315201, People's Republic of China

Abstract

Anisotropic magnetoresistance (AMR) effect has been discovered over one century, but keeps attracting people's special attention due to its wide applications in magnetic devices as well as its intimate relationship with the most fascinating physics such as spin–orbit interaction and spin–charge coupling. In this review article, we introduce the general characters and tuning methods of AMR effect in perovskite manganites, the typical strongly correlated electron system, and discuss the possible mechanisms behind. Outlooks of the AMR effects in manganites and related devices are also addressed.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S2010324712300046

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