Affiliation:
1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan, R.O.C.
Abstract
This work is focused on determining the electrical resistance, which is induced by single domain wall (DW) in magnetic nanowire (NW) with a negligible defect. The provided model covers a wide range of NW diameters. The obtained result demonstrates a few-order rapid reduction of the DW resistance accompanied by its possible deviations versus the diameter growth ranging from 1.2[Formula: see text]nm to 15.2[Formula: see text]nm. The origin of these deviations, which are also identified as oscillations, is referred to the nonuniform electron scattering on the DW due to the intermixing electron scattering conditions: ballistic for one spin channel and quasi-ballistic for other one with opposite spin direction. It may happen when the DW width by value is approximately in between two lengths: a mean free path (MFP) with the spin down and spin up. The indirect evidence of this finding also comes from the fact that homogeneous NWs show the most valuable DW resistance oscillations by magnitude rather than segmented magnetic NWs. In addition to the approach, where DW width is constant, the other reasonable model is used when the DW can be constrained for some conditions. The same results are valid for magnetic junctions with DW. Finally, resistance simulation in the diffusive range, when a diameter of the NW (or point-like junction) is larger than any of spin-resolved MFP of electrons, successfully follows experimental data for the single and double DW resistances available in literature.
Funder
Ministry of Science and Technology, Taiwan
Publisher
World Scientific Pub Co Pte Ltd
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献