Affiliation:
1. Leibniz IFW Institute for Solid State and Materials Research, Helmholtzstraße 20, D-01069 Dresden, Germany
2. Department of Applied Physics, Physics of Nanostructures, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven, The Netherlands
Abstract
Heusler compounds exhibit different electronic ground states and functionalities, making them attractive materials for studies of their fundamental properties and for their technological exploitation. The high spin polarization, predicted in particular for Co 2-based Heusler compounds, renders them prime candidates for electrode materials in spintronic devices such as giant magnetoresistance (GMR) elements or magnetic tunnel junctions and requires their implementation in thin film stacks. The growth of high quality Heusler films, however, demands their careful characterization. Typical issues in Heusler thin films are, besides the type and degree of structural order, the control of the film composition and the conservation of smooth interfaces between different layers in the film, e.g., between the Heusler layer and the tunneling barrier, while at the same time enabling high structural order. This review illustrates how nuclear magnetic resonance spectroscopy contributes to those issues by discussing recent examples of nuclear magnetic resonance studies of Heusler thin films.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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