THE DEVELOPMENT OF PERPENDICULAR MAGNETIC TUNNELING JUNCTIONS

Author:

LEE HUANG-MING1,LEE YEN-CHI1,CHEN HAO-HSUAN1,HORNG LANCE1,WU JONG-CHING1,LEE CHING-MING2,WU TE-HO2,CHERN GUNG3

Affiliation:

1. Taiwan SPIN Research Center, National Changhua University of Education, Taiwan

2. Taiwan SPIN Research Center, National Yunlin University of Science and Technology, Taiwan

3. Taiwan SPIN Research Center, National Chung Cheng University, Taiwan

Abstract

This paper reviews the progress made over the last few years in understanding the development of perpendicular magnetic tunneling junctions (pMTJs). The material systems for making pMTJs, including rare-earth/transition metal alloys, L10-ordered (Co, Fe)–Pt alloys, Co/(Pd, Pt) multilayers, and CoFeB–MgO crystallized structures, are briefly introduced. The fabrication processes of the MTJ devices are focused on, consisting of open-trench, etch-back and self-aligned techniques. The authors also propose a spin-torque nano-oscillator based on pMTJ, for application in GHz range telecommunications.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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