Affiliation:
1. Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, India
Abstract
Spin relaxation process is simulated for nanowires and 2-D channels composed of II–VI DMS materials, particularly for Cd 1-x Mn x Te , in our work. Our studies are focused on analyzing spin relaxation behavior at T = 1 K. Variations in spin relaxation length with applied field and concentration of Mn doping are calculated and plotted. Effect of one-magnon scattering process is significant due to magnetic nature of the materials and is demonstrated in this work.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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