Magnetization Switching in Atom-Thick Mo Engineered Exchange Bias-Based SOT-MRAM

Abstract

The manipulation and detection of antiferromagnetic (AFM) in exchange bias (EB)-based MRAM using spin-orbit torque (SOT) holds promise for developing highly reliable and ultrafast spintronic memory devices. However, the high switching current induced by the SOT-induced EB field remains a major drawback. Additionally, the mechanism behind the interaction between the EB field and the SOT remains unclear. To address this issue, we have introduced a thin layer of Mo between the AFM and ferromagnetic-free layers to tune the EB field and study the SOT-induced switching properties. Our findings indicate that when the SOT is dominant during short pulses of a few nanoseconds, Mo insertion can significantly reduce the EB field and decrease the SOT switching current, leading to a reduction in power consumption of these memories. This approach could open up new possibilities for optimizing EB-MRAM and improving our understanding of AFM electronics.