FACET PREPARATION OF SILICON NANO-WAVEGUIDES BY CLEAVING THE SOI CHIP

Abstract

Optical facet preparation of silicon-on-insulator (SOI) waveguides was done by polishing after saw dicing or cleaving after two different techniques of scoring by a mechanical saw and fs-laser. Cleaving after fs-laser scoring leads to smooth facet surface of air covered SOI waveguides; polishing after dicing is more efficient with SiO2covered waveguides. The prepared end facets were investigated using an atomic force microscope (AFM) and scanning electron microscopy (SEM). The SOI waveguides were characterized by optical transmission of telecommunication wavelength (1.5 μm).