Affiliation:
1. Politecnico di Milano, Dipartimento di Elettronica ed Informazione, Piazza Leonardo da Vinci, 32 20133 Milano, Italy
Abstract
The aim of this work is to present the application of photoconductive properties of electro-optical n-doped CdTe:In single crystals to all-optical processing of signals at λ=1550 nm. The mechanism exploits the photogeneration of charge carriers from deep intragap energy levels and their trap-limited drift process under the action of an externally applied cw electric field. An internal space-charge counterfield results that locally shields the electro-optic effect. Different types of free-space architectural elementary modules in CdTe:In have been implemented. A non-coherent wavelength converter, a switching device, a sampler and a time-to-space converter are presented. The nanosecond regime has been reached.
Publisher
World Scientific Pub Co Pte Lt
Subject
Physics and Astronomy (miscellaneous),Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献