Charge transport in LiNbO3-based heterostructures

Abstract

Successful application of the LiNbO3-based heterostructures in the integrated electronics and optoelectronics is mostly determined by the charge transport phenomenon in the LiNbO3 since this affects their basic parameters. Depending on the particular conditions (temperature, applied field, properties of LiNbO3/substrate heterojunction, etc.), various conduction mechanisms occur simultaneously and primarily, they can be divided into two major groups: contact-limited and bulk-limited. Identification and study of the charge transport mechanisms allow deriving the vital physical properties such as the barrier height at LiNbO3 film/substrate interface, charged defect concentration, traps spacing as well as type and drift mobility of the carriers in the LiNbO3 films. In this paper, the conduction mechanisms in LiNbO3-based heterostructures are discussed in detail and electrical parameters are derived.