Quantum corrections on threshold and growth rate of modulational amplification in semiconductor magneto-plasmas

Abstract

Using the quantum hydrodynamic model (QHDM), quantum corrections (via Bohm potential) on modulational amplification characteristics in semiconductor magneto-plasmas are investigated. Expressions are obtained for the threshold pump amplitude and the growth rate of the modulated beam with including and excluding quantum effects (QEs). Numerical analysis is performed for [Formula: see text]-InSb/CO2 laser system. The dependence of the threshold pump amplitude and the growth rate of the modulated beam on wave number, applied magnetic field (via cyclotron frequency), and plasma carrier concentration (via plasma frequency) are explored. The lowering in threshold pump amplitude and enhancement of growth rate of the modulated beam is observed by incorporating the QEs. The analysis provides detailed information of QEs on semiconductor magneto-plasmas and establishes the technological potentiality of semiconductor magneto-plasmas as the hosts for the fabrication of efficient optical modulators.