IMPROVEMENT IN FIGURE OF MERIT BY DOPING FOR SQUEEZED STATE GENERATION IN GaAs

Abstract

A simplistic theoretical investigation based upon the free electron model of optical nonlinearities has been made to establish the superiority of a doped semiconductor over its intrinsic counterpart in efficient squeezed state generation. Choice of Doping level at a given operating frequency regime has to be carefully choosen to avoid free carrier absorption and scattering losses. The relevant figure of merit is found to favor a doped crystal duly shined by off-resonant low frequency laser as a potential scheme to achieve significant quadrature variance. Numerical calculations have been made for GaAs sample irradiated with 10.6 μm pulsed CO 2 laser of intensity ~ 1.6 × 102 GW/m 2.