Infrared Absorptive and Dispersive Optical Bistabilities of Semiconductor Superlattice Etalons
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Published:1997-03
Issue:01
Volume:06
Page:55-68
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ISSN:0218-8635
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Container-title:Journal of Nonlinear Optical Physics & Materials
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language:en
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Short-container-title:J. Nonlinear Optic. Phys. Mat.
Author:
Zhao Guo-Zhong1,
Pan Shao-Hua1
Affiliation:
1. Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China
Abstract
We have derived Maxwell-Bloch equations of a two-subband model suitable for studying intersubband-transition induced optical-nonlinearities of semiconductor superlattices (SLs). Analytical expressions and numerical illustrations for absorptive and dispersive optical bistabilities (OBs) of SL etalons are given. Both OBs can be realized in infrared region with high frequency selectivity, and their bistable domains and hysteresis loops are much larger than those of a two-level system. The dispersive OB is preferable due to its lower value of the input power.
Publisher
World Scientific Pub Co Pte Lt
Subject
Physics and Astronomy (miscellaneous),Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials