Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics-Reference-Cited by-同舟云学术

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Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics

Published:2020-02 Issue: Volume: Page:63-78
ISSN:1793-1274
Container-title:Selected Topics in Electronics and Systems
language:
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Author:

Hasan Md Nazmul¹,Swinnich Edward¹,Seo Jung-Hun¹

Affiliation:

1. Department of Materials Design and Innovation, University at Buffalo, Buffalo, NY 14260, USA

Publisher

WORLD SCIENTIFIC

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Next Generation High-Power Material Ga₂O₃: Its Properties, Applications, and Challenges;Nanoelectronic Devices and Applications;2024-06-26

2. Full-band Monte Carlo simulation of two-dimensional electron gas in (Al_xGa_1−x)₂O₃/Ga₂O₃ heterostructures;Journal of Applied Physics;2022-11-28

3. Transient characteristics of β-Ga₂O₃ nanomembrane Schottky barrier diodes on various substrates;Journal of Physics D: Applied Physics;2022-07-18

4. A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications;ACS Applied Electronic Materials;2022-06-06

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