Sol–Gel Dip Coating Method Synthesis of Mn-Doped Titanium Dioxide Thin Films

Author:

Kharoubi Abdelmalek1,Bouaza Amar1,Benrabah Bedhiaf1,Ammari Abdelkader2,Benhebal Hadj3,Khiali Belkacem4,Dalache Cherifa5

Affiliation:

1. Laboratoire de Génie Physique, Université Ibn-Khaldoun, Tiaret, Algérie

2. Laboratoire de Micro et Nanophysique, Ecole Polytechnique Nationale d’Oran (ENPO), Algérie

3. Département de Chimie, Faculté des Sciences de la Matière, Université Ibn-Khaldoun, Tiaret, Algérie

4. Laboratoire de Génie Energétique et Génie Informatique, Université Ibn Khaldoun Tiaret, Algérie

5. Département de Physique, Faculté des Sciences de la Matière, Université Ibn-Khaldoun, Tiaret, Algérie

Abstract

Undoped and Mn-doped TiO2 thin films have been prepared by sol–gel dip-coating technique on glass and silicon substrates. X-ray diffraction studies showed that both TiO2 and Mn-doped TiO2 thin films are of anatase phase with (101) as preferential orientation. All films exhibit high transparency ([Formula: see text]80%) over the visible range. The optical bandgap decreases from 3.66[Formula: see text]eV to 3.52[Formula: see text]eV due to the extent of electronic states introduced by doping. Infrared transmission spectra showed Ti–O (625[Formula: see text]cm[Formula: see text]) and Ti–O–Ti (495–436[Formula: see text]cm[Formula: see text]) bands. Thermal analysis revealed endothermic reactions between 94C and 110C and exothermic reactions between 406C and 443C. The Nyquist plots depicted that equivalent circuit of the films is an [Formula: see text] parallel. The resistance [Formula: see text] decreases while the capacitance [Formula: see text] increases with Mn-doping.

Publisher

World Scientific Pub Co Pte Lt

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