Morphological Organization in Epitaxial Growth and Removal-Reference-Cited by-同舟云学术

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Morphological Organization in Epitaxial Growth and Removal

Published:1999-01 Issue: Volume: Page:
ISSN:1793-1444
Container-title:Series on Directions in Condensed Matter Physics
language:
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Author:

Zhang Zhenyu¹,Lagally Max G²

Affiliation:

1. Oak Ridge National Laboratory

2. University of Wisconsin-Madison

Publisher

WORLD SCIENTIFIC

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE;Chinese Physics B;2015-09-29

2. Specular reflectivity from pyramidal surface morphologies;Physica B: Condensed Matter;2003-08

3. Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate;Journal of Crystal Growth;2000-10

4. Evolution of far-from-equilibrium nanostructures on Ag(100) surfaces: Protrusions and indentations at extended step edges;Physical Review B;2000-02-15

5. Spatial Correlations in Growing Films;MRS Proceedings;2000

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