Variation of I–V characteristics due to process parameters as base for modeling the component variability for LDD MOSFET devices

Abstract

In this paper, we present the effect of process parameters variations on [Formula: see text]–[Formula: see text] characteristics of LDD MOSFETs through a simulation study, applying also to any submicron device. In particular, we examine the effect of variation of ionic implantation for different channel doping involved in MOSFET production. At last, we examine a linear [Formula: see text]–[Formula: see text] model to simulate more adequately the effects of variation of the process parameters as correction to the base model.