5″ diameter PIN-PMN-PT crystal growth by the Bridgman method

Author:

Guo Haisheng1,Song Kexin1,Li Zhenrong1,Fan Shiji1,Xu Zhuo1

Affiliation:

1. Electronic Materials Research Laboratory, Key Lab of Education Ministry and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, P. R. China

Abstract

Pb([Formula: see text][Formula: see text])O3-Pb([Formula: see text][Formula: see text]O3-PbTiO3 (PIN-PMN-PT) relaxor ferroelectric crystals in 5 diameter by 5 length were grown by the Bridgman (BR) method for the first time. Typical issues in the crystal growth concerning large volume of the melt, high density of the crystal and corrosion of the melt on the wall of Pt crucible are discussed.

Funder

111 Project

international science & technology cooperation program of China

Science and Technolgy Research and Development Program of Shaanxi Province

National Basic Research Program of China

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

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