5″ diameter PIN-PMN-PT crystal growth by the Bridgman method
Author:
Affiliation:
1. Electronic Materials Research Laboratory, Key Lab of Education Ministry and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, P. R. China
Abstract
Funder
111 Project
international science & technology cooperation program of China
Science and Technolgy Research and Development Program of Shaanxi Province
National Basic Research Program of China
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Link
https://www.worldscientific.com/doi/pdf/10.1142/S2010135X20500010
Reference15 articles.
1. Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals
2. Single Crystal of the Pb(Zn1/3Nb2/3)O3–PbTiO3System Grown by the Vertical Bridgeman Method and Its Characterization
3. S. J. Fan , Abstract Book of the 1st Asian Conf. Crystal Growth and Crystal Technology (CGCT-1) (2000), pp. 136–137.
4. Variations of composition and dielectric properties of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystal along growth direction
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