STRUCTURAL AND OPTICAL PROPERTIES OF n-TYPE POROUS SILICON: EFFECT OF LIGHT ILLUMINATION

Abstract

Porous silicon (PS) layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR, and PL have been used to characterize the morphological and optical properties of PS. The influence of varying light illumination in the anodizing solution, on structural and optical properties of PS, has been investigated. It is observed that pore size increases with light illumination level, attains maximum for 17.5 mW/m2 and then decreases. The PL spectrum peak shifts toward the higher energy side, which supports the quantum confinement effect in PS. The FTIR shows that the Si – H n peaks are observed at the surface of the PS layer and these chemical species also give raise the PL in PS.