Photoemission Study of K Doping on a Monolayer of C60 on Clean Si(001)-(2 × 1) Surface

Author:

Pi Tun-Wen1,Hong Le-Hong1,Wu Rong-Tzong1,Cheng Chiu-Ping2,Ko May-Ho3

Affiliation:

1. Synchrotron Radiation Research Center, Hsinchu, Taiwan, ROC

2. Department of Physics, National Tsing Hua University, Hsinchu, Taiwan, ROC

3. Department of Materials Science, National Tsing Hua University, Hsinchu, Taiwan, ROC

Abstract

We present the first valence band photoemission study of a monolayer K x C 60 on a clean Si(001)-(2 × 1) surface. The monolayer C60 which shows weak interaction with the silicon surface reveals clear, but broadened, structures corresponding to bulk C 60. Upon K exposure, the work function drops rapidly due to charge polarization toward the Si surface, considerably affecting then the rate of the Lumo filling. Its centroid initially shown at 0.6 eV shifts to higher binding energy with higher concentration. Moreover, the LUMO always separates 1.5 ± 0.1 eV from the Homo. Features associated with the many-body effect do not appear in the spectra. The Fermi cutoff has never been observed, indicating the insulating nature of the K x C 60 surface.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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