THE ROLE OF PRESSURE TO QUANTIFY THE DEFECTS AND ITS EFFECT ON THE MORPHOLOGY OF GRAPHENE LAYERS

Abstract

The work reports the traces of graphene synthesized by Thermal-CVD technique over oxidized silicon substrates coated with nickel and cobalt catalysts under different pressures. Other process parameters like temperature, gas composition and time are kept constant during the growth. Effect of pressure on the nature of defects and structure of the graphene has been analyzed by Raman spectra. Effect of pressure on morphology has also been studied. It has been observed that the variation of pressure is responsible for any change in the structure and morphology of the graphene for a given catalyst. Formation of graphene and its defects has been explained with the help of two-step diffusion process.