LEEM/STM STUDIES OF NONREACTIVE AND REACTIVE GROWTH ON SILICON SURFACES
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Published:1996-04
Issue:02
Volume:03
Page:1305-1314
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ISSN:0218-625X
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Container-title:Surface Review and Letters
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language:en
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Short-container-title:Surf. Rev. Lett.
Affiliation:
1. Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287–1504, USA
Abstract
The nucleation and growth behavior of two very different systems are studied by low-energy electron microscopy (LEEM) and scanning tunneling microscopy (STM). The first is a nonreactive system of Pb growth on the Si(100) surface at room temperature and the second is a reactive system in which nitride layers are formed on Si(111) during reaction with NH 3 at high temperatures. In both cases, the mobilities of the diffusing species have a strong influence on the resulting growth morphologies.
Publisher
World Scientific Pub Co Pte Lt
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Cited by
1 articles.
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