NONEXPONENTIAL DECAY OF VISIBLE LUMINESCENCE FROM POROUS SILICON: EXCITON LOCALIZATION AND HOPPING-Reference-Cited by-同舟云学术

NONEXPONENTIAL DECAY OF VISIBLE LUMINESCENCE FROM POROUS SILICON: EXCITON LOCALIZATION AND HOPPING

Published:1996-02 Issue:01 Volume:03 Page:1163-1166
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

KANEMITSU Y.¹,OGAWA T.²

Affiliation:

1. Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan

2. Department of Applied Physics, Osaka City University, Sumiyoshi-ku, Osaka 558, Japan

Abstract

We have studied the decay dynamics of visible photoluminescence (PL) from nanometer-sized Si crystallites. The slow decay behavior of red PL in 10 −6−10−2- s time regions is characterized by a stretched exponential function. The temperature dependence of the effective PL decay rate coincides with that of variable-range hopping of carriers in two-dimensional systems. Thus, it is naturally considered that the slow decay PL is caused by the hopping-limited recombination of excitons in surface localized states.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X96002084

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