QUANTITATIVE STUDY OF THERMAL DIFFUSION OF ELEMENTS ACROSS A ZnSe/GaAs INTERFACE USING SIMS
Author:
Affiliation:
1. School of Physics, La Trobe University, Bundoora Vic. 3083, Australia
2. School of Electronic Engineering, La Trobe University, Bundoora Vic. 3083, Australia
3. Environmental Science, ANSTO, Private Bag 1, Menai NSW 2234, Australia
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0218625X01000926
Reference6 articles.
1. Characterization of ZnSe/GaAs heterojunctions by SIMS and ellipsometry
2. Comparative Study of ZnSe Growth Rate by Metal Organic Molecular Beam Epitaxy Using Different Zn Sources
3. A structural and compositional analysis of interfaces in ZnSe0.94S0.06 layers grown on to GaAs by OMCVD
4. ZnSe/GaAs Heterointerface Stabilization by High-Temperature Se Treatment of GaAs Surface
5. Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. SIMS STUDIES OF Cl-DOPED ZnSe EPILAYERS GROWN BY MBE;Surface Review and Letters;2006-04
2. Observation of oxygen contamination at ZnSe/GaAs interfaces using SIMS;Applied Surface Science;2006-03
3. Reflection high-energy electron diffraction (RHEED) study of MBE growth of ZnSe on GaAs(1 1 1)B surfaces;Applied Surface Science;2001-09
4. Current Awareness;Journal of Mass Spectrometry;2001
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